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| (R) STP12PF06 P - CHANNEL 60V - 0.18 - 12A TO-220 STripFETTM POWER MOSFET TYPE STP12PF06 s s s s s V DSS 60 V R DS(o n) < 0.20 ID 12 A TYPICAL RDS(on) = 0.18 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE APPLICATION ORIENTED CHARACTERIZATIONL 3 1 2 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s MOTOR CONTROL s DC-DC & DC-AC CONVERTERS TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol V DS V DGR VGS ID ID I DM (*) P tot dv/dt T st g Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k) Gate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) Total Dissipation at T c = 25 C Derating F actor Peak Diode Recovery voltage slope Storage T emperature Max. Operating Junction Temperature o o Value 60 60 20 12 8.4 48 60 0.4 6 -65 to 175 175 Unit V V V A A A W W /o C V/ns o o C C (*) Pulse width limited by safe operating area ( 1) ISD 12 A, di/dt 300 A/s, VDD V(BR)DSS, Tj TJMAX Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed May 2000 1/8 STP12PF06 THERMAL DATA R thj -case R thj -amb R thc-sink Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature F or Soldering Purpose Max Max T yp 2.5 62.5 0.5 275 o o C/W C/W o C/W o C AVALANCHE CHARACTERISTICS Symbo l IAR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 o C, ID = IAR , V DD = 25V) Max Value 12 200 Unit A mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbo l V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Con ditions I D = 250 A V GS = 0 Min. 60 1 10 100 Typ. Max. Unit V A A nA V DS = Max Rating Zero Gate Voltage Drain Current (V GS = 0) V DS = Max Rating Gate-body Leakage Current (VDS = 0) V GS = 20 V T c = 125 oC ON () Symbo l V GS(th) R DS(on) I D(o n) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance On State Drain Current V GS = 10V Test Con ditions ID = 250 A ID = 6 A 12 Min. 2 Typ. 3.4 0.18 Max. 4 0.20 Unit V A V DS > ID(o n) x R DS(on )ma x V GS = 10 V DYNAMIC Symbo l g f s () C iss C os s C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Con ditions V DS > ID(o n) x R DS(on )ma x V DS = 25 V f = 1 MHz ID = 6 A V GS = 0 Min. 2.5 Typ. 6 850 230 75 Max. Unit S pF pF pF 2/8 STP12PF06 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l t d(on) tr Qg Q gs Q gd Parameter Turn-on Delay T ime Rise Time Total G ate Charge Gate-Source Charge Gate-Drain Charge Test Con ditions V DD = 30 V ID = 6 A R G = 4.7 V GS = 10 V (Resistive Load, see fig. 3) V DD = 48 V ID = 12 A V GS = 10 V Min. Typ. 20 40 16 4 6 21 Max. Unit ns ns nC nC nC SWITCHING OFF Symbo l t d(of f) tf tr (Voff) tf tc Parameter Turn-off Delay T ime Fall T ime Off-voltage Rise T ime Fall T ime Cross-over Time Test Con ditions V DD = 30 V ID = 6 A V GS = 10 V R G = 4.7 (Resistive Load, see fig. 3) V DD = 48 V I D = 12 A V GS = 10 V R G = 4.7 (Induct ive Load, see fig. 5) Min. Typ. 40 10 10 17 30 Max. Unit ns ns ns ns ns SOURCE DRAIN DIODE Symbo l ISD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 12 A V GS = 0 100 260 5.2 I SD = 12 A di/dt = 100 A/s T j = 150 o C V DD = 30 V (see test circuit, fig. 5) Test Con ditions Min. Typ. Max. 10 40 2.5 Unit A A V ns nC A () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance 3/8 STP12PF06 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STP12PF06 Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 STP12PF06 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STP12PF06 TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 E mm TYP. MAX. 4.60 1.32 2.72 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 MIN. 0.173 0.048 0.094 4.40 1.23 2.40 inch TYP. MAX. 0.181 0.051 0.107 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.151 A C D1 L2 F1 D G1 Dia. F2 F L5 L7 L6 L9 L4 G H2 P011C 7/8 STP12PF06 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2000 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 8/8 |
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